?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc2333 npn epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted *pw 350 s, duty cycle 10% electrical characteristics tc=25 c unless otherwise noted * pulse test: pw 350 s, duty cycle 2%pulsed h fe classification symbol parameter value units v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current (dc) 2 a i cp *collector current (pulse) 4 a i b base current (dc) 1 a p c collector dissipation (t c =25 c) 15 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol parameter test condition min. max. units v ceo (sus) collector-emitter sustaining voltage i c = 0.5a, i b =0.1a, l = 1mh 400 v v cex (sus)1 collector-emitter sustaining voltage i c = 0.5a, i b1 = -i b2 = 0.1a t c = 125 c, l = 180 h, clamped 450 v v cex (sus)2 collector-emitter sustaining voltage i c = 1a, i b1 = 0.2a, -i b2 =0.2a t c = 125 c, l = 180 h, clamped 400 v i cbo collector cut-off current v cb = 400v, i e = 0 10 a i cer collector cut-off current v ce = 400v, r be =51 ? , t c = 125 c 1ma i cex1 collector cut-off current v ce = 400v, v be (off) = -5v 10 a i cex2 collector cut-off current v ce = 400v, v be (off) = -5v @ t c = 125 c 1ma i ebo emitter cut-off current v eb = 5v, i c = 0 10 a h fe1 h fe2 * dc current gain v ce = 5v, i c = 0.1a v ce = 5v, i c = 0.5a 20 10 80 v ce (sat) * collector-emitter saturation voltage i c = 0.5a, i b = 0.1a 1 v v be (sat) * base-emitter saturation voltage i c = 0.5a, i b = 0.1a 1.2 v t on turn on time v cc = 150v, i c = 0.5a i b1 = - i b2 = 0.1a r l = 300 ? 1 s t stg storage time 2.5 s t f fall time 1 s classification r o y h fe1 20 ~ 40 30 ~ 60 40 ~ 80 ksc2333 high speed switching application ? low collector saturation voltage ? specified of reverse biased soa with inductive load 1.base 2.collector 3.emitter 1 to-220
?2001 fairchild semiconductor corporation ksc2333 rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage base-emitter saturation voltage figure 4. turn on, storage and fall time vs collector current figure 5. forward bias safe operating area figure 6. reverse bias safe operating area 012345 0.0 0.2 0.4 0.6 0.8 1.0 i b = 100ma i b = 90ma i b = 80ma i b = 70ma i b = 60ma i b = 50ma i b = 40ma i b = 30ma i b = 20ma i b = 10ma ic[a], collector current v ce [v], collector-emitter voltage 1 10 100 1000 1 10 100 1000 v ce = 5v pulsed h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 10 i c /i b = 5 pulsed v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 10 100 1000 0.01 0.1 1 10 t on t f i c = 5i b1 = -5i b2 pulsed t stg t on [ s], turn on time t stg [ s], storage time t f [ s], fall time i c [ma], collector current 1 10 100 1000 10 100 1000 10000 10ms 1ms s/b limited dissipation limited 100 s pw=10 s i c [ma], collector current v ce [v], collector-emitter voltage 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ceo (sus) v cex (sus) i c (a), collector current v ce (v), collector-emitter voltage
?2001 fairchild semiconductor corporation ksc2333 rev. a1, june 2001 typical characteristics (continued) figure 7. derating curve of safe operating areas figure 8. power derating 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 dissipation limited s/b limited dt(%), i c derating t c [ o c], case temperature 0 25 50 75 100 125 150 175 200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 p c [w], power dissipation t c [ o c], case temperature
package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc2333 dimensions in millimeters 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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